PART |
Description |
Maker |
CSB1370 CSB1370F CSB1370D CSB1370E |
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 160 - 320 hFE. 30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE. 30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 120 hFE. PNP Silicon Epitaxial Power Transistor
|
CDIL[Continental Device India Limited]
|
2SA539 |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 400mW.
|
USHA India LTD
|
ASI10749 VMB80-28S VHB25-12S |
NPN Silicon RF Power Transistor(Ic:9.0 A,Vcbo: 65 V,Vceo: 36 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:9.0 A,Vcbo: 65 V,Vceo: 36 V,Vebo: 4.0 V))
|
Advanced Semiconductor, Inc. ASI[Advanced Semiconductor]
|
CMBT2484 |
0.225W General Purpose NPN SMD Transistor. 60V Vceo, 0.050A Ic, 250 hFE.
|
Continental Device India Limited
|
2N5191 |
40.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 25 - 100 hFE.
|
Continental Device India Limited
|
ASI10592 HF10-12F |
NPN Silicon RF Power Transistor(Ic:4.5 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:4.5 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 4.0 V)) HF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Semiconductor, Inc. ASI[Advanced Semiconductor]
|
ASI10593 HF10-12S |
NPN Silicon RF Power Transistor(Ic:4.5 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:4.5 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 4.0 V)) HF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Semiconductor, Inc.
|
FDB035AN06A0 FDB035AN06A0NL |
N-Channel PowerTrench MOSFET 60V/ 80A/ 3.5m N-Channel PowerTrench MOSFET 60V, 80A, 3.5mз Discrete Automotive N-Channel PowerTrench MOSFET, 60V, 80A, 0.0035 Ohms @ VGS = 10V, TO-263/D2PAK Package N-Channel PowerTrench MOSFET 60V, 80A, 3.5mOhm
|
FAIRCHILD[Fairchild Semiconductor]
|
BCP51 BCP53 BCP52-10 BCP53-10 BCP53-16 BCP51-10 BC |
PNP Silicon AF Transistors General Purpose Transistors - SOT223; VCEO=45V; hFE=63..160 General Purpose Transistors - SOT223; VCEO=60V; hFE=63..160 General Purpose Transistors - SOT223; VCEO=80V; hFE=63..160 General Purpose Transistors - SOT223; VCEO=45V; hFE=40..250 General Purpose Transistors - SOT223; VCEO=45V; hFE=100..250 General Purpose Transistors - SOT223; VCEO=60V; hFE=100..250 General Purpose Transistors - SOT223; VCEO=80V; hFE=100..250
|
Infineon Technologies A... Infineon Technologies AG
|
2SD313 |
NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 40 @ Ic = 2A. Pd = 30W.
|
USHA India LTD
|
2SA733 |
Collector-Base Voltage: VCBO=-60V Emitter to base voltage VEBO -5.0 V
|
TY Semiconductor Co., Ltd
|